 | VJ0603D221FXAAR | 220pF 50V 세라믹 커패시터 C0G, NP0 0603(1608 미터법) 0.063" L x 0.031" W(1.60mm x 0.80mm) | | VJ0603D221FXAAR.pdf |
 | C1825C511KZGACTU | 510pF 2500V(2.5kV) 세라믹 커패시터 C0G, NP0 1825(4564 미터법) 0.177" L x 0.252" W(4.50mm x 6.40mm) | | C1825C511KZGACTU.pdf |
 | VJ0805D122FLXAT | 1200pF 25V 세라믹 커패시터 C0G, NP0 0805(2012 미터법) 0.079" L x 0.049" W(2.00mm x 1.25mm) | | VJ0805D122FLXAT.pdf |
 | ECW-H10222RHV | 2200pF Film Capacitor 1000V (1kV) Polypropylene (PP), Metallized Radial 0.709" L x 0.256" W (18.00mm x 6.50mm) | | ECW-H10222RHV.pdf |
 | 664HC3700K4TM6 | 0.66µF Film Capacitor 700V Polypropylene (PP) Nonstandard 2.362" L x 2.362" W (60.00mm x 60.00mm) | | 664HC3700K4TM6.pdf |
 | ECS-184-S-5P-TR | 18.432MHz ±30ppm 수정 시리즈 40옴 -10°C ~ 70°C 표면실장(SMD, SMT) HC49/US | | ECS-184-S-5P-TR.pdf |
 | GLA67F23IET | 6.7458MHz ±20ppm 수정 20pF 80옴 -40°C ~ 85°C 표면실장(SMD, SMT) HC49/US | | GLA67F23IET.pdf |
 | 9C-48.000MEEJ-T | 48MHz ±10ppm 수정 18pF 80옴 -20°C ~ 70°C 표면실장(SMD, SMT) HC49/US | | 9C-48.000MEEJ-T.pdf |
 | 416F48025CKR | 48MHz ±20ppm 수정 8pF 100옴 -20°C ~ 70°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | 416F48025CKR.pdf |
 | SIT3809AI-2-28NG | 80MHz ~ 220MHz LVCMOS, LVTTL MEMS (Silicon) Programmable Oscillator Surface Mount 2.8V 36mA | | SIT3809AI-2-28NG.pdf |
.jpg) | RT0402FRD07243RL | RES SMD 243 OHM 1% 1/16W 0402 | | RT0402FRD07243RL.pdf |
 | 66L075-0343 | THERMOSTAT 75 DEG NC 8-DIP | | 66L075-0343.pdf |